MICROCHIP APTM100H35FT3G

MICROCHIP · FETs & Power MOSFETs · MPN APTM100H35FT3G

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)22A
RDS(on)420mΩ
Pd - Power Dissipation390W
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage1kV
Type-
Reverse Transfer Capacitance (Crss@Vds)160pF
Number-
Input Capacitance(Ciss)5.2nF
Gate Charge(Qg)186nC@10V
Operating Temperature-40℃~+150℃

Technical details

22A 420mΩ 390W FET, MOSFET Arrays RoHS

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