MICROCHIP APTM100DSK35T3G

MICROCHIP · FETs & Power MOSFETs · MPN APTM100DSK35T3G

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Specifications

Current - Continuous Drain(Id)22A
RDS(on)420mΩ@10V
Pd - Power Dissipation390W
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage1kV
Number2 N-Channel
Input Capacitance(Ciss)5.2nF
Gate Charge(Qg)186nC@10V
Operating Temperature-40℃~+150℃

Technical details

22A 420mΩ@10V 390W 5V 2 N-Channel FET, MOSFET Arrays RoHS

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