MICROCHIP APTM100A23STG

MICROCHIP · FETs & Power MOSFETs · MPN APTM100A23STG

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Specifications

Configuration-
Current - Continuous Drain(Id)36A
Pd - Power Dissipation694W
RDS(on)270mΩ@10V
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage1kV
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)240pF
Number2 N-Channel
Input Capacitance(Ciss)8.7nF
Gate Charge(Qg)308nC@10V
Operating Temperature-40℃~+150℃

Technical details

36A 694W 270mΩ@10V 5V 2 N-Channel FET, MOSFET Arrays RoHS

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