MICROCHIP · FETs & Power MOSFETs · MPN APTM100A13SG
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 65A |
| Pd - Power Dissipation | 1.25kW |
| RDS(on) | 156mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Drain to Source Voltage | 1kV |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 15.2nF |
| Gate Charge(Qg) | 562nC@10V |
| Operating Temperature | -40℃~+150℃ |
65A 1.25kW 156mΩ@10V 5V 2 N-Channel FET, MOSFET Arrays RoHS