MICROCHIP APTM100A13DG

MICROCHIP · FETs & Power MOSFETs · MPN APTM100A13DG

No reviews yet — be the first to review MICROCHIP APTM100A13DG.

Specifications

Configuration-
Current - Continuous Drain(Id)65A
Pd - Power Dissipation1.25kW
RDS(on)156mΩ@10V
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage1kV
Type-
Reverse Transfer Capacitance (Crss@Vds)420pF
Number2 N-Channel
Input Capacitance(Ciss)15.2nF
Gate Charge(Qg)562nC@10V
Operating Temperature-40℃~+150℃

Technical details

65A 1.25kW 156mΩ@10V 5V 2 N-Channel FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs