MICROCHIP APTC60AM45B1G

MICROCHIP · FETs & Power MOSFETs · MPN APTC60AM45B1G

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)49A
Pd - Power Dissipation250W
RDS(on)45mΩ@10V
Gate Threshold Voltage (Vgs(th))3.9V
Drain to Source Voltage600V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number3 N-channels
Input Capacitance(Ciss)7.2nF
Gate Charge(Qg)150nC@10V
Operating Temperature-40℃~+150℃

Technical details

49A 250W 45mΩ@10V 3.9V 3 N-channels FET, MOSFET Arrays RoHS

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