MICROCHIP APT9M100S/TR

MICROCHIP · FETs & Power MOSFETs · MPN APT9M100S/TR

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation335W
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.605nF

Technical details

1kV 9A 5V 335W 1.4Ω@10V 1 N-channel D3PAK Single FETs, MOSFETs RoHS

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