MICROCHIP · FETs & Power MOSFETs · MPN APT9M100B
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 335W |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.605nF |
1kV 9A 5V 335W 1.4Ω@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS