MICROCHIP APT9F100B

MICROCHIP · FETs & Power MOSFETs · MPN APT9F100B

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation337W
RDS(on)1.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.606nF

Technical details

1kV 9A 4V 337W 1.6Ω@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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