MICROCHIP APT8030JVFR

MICROCHIP · FETs & Power MOSFETs · MPN APT8030JVFR

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Specifications

Gate Charge(Qg)80nC
Drain to Source Voltage800V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation337W
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

800V 12A 4V 337W 900mΩ@10V 1 N-channel N-Channel SOT-227B-4 Single FETs, MOSFETs RoHS

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