MICROCHIP APT58M80J

MICROCHIP · FETs & Power MOSFETs · MPN APT58M80J

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)570nC@10V
Output Capacitance(Coss)1.745nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation960W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)17.55nF
TypeN-Channel

Technical details

800V 60A 960W 100mΩ@10V 1 N-channel N-Channel SOT-227 Single FETs, MOSFETs RoHS

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