MICROCHIP APT4F120S

MICROCHIP · FETs & Power MOSFETs · MPN APT4F120S

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation403W
RDS(on)1.25Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.385nF
TypeN-Channel

Technical details

1.2kV 12A 5V 403W 1.25Ω@10V 1 N-channel N-Channel D3PAK Single FETs, MOSFETs RoHS

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