MICROCHIP APT48M80B2

MICROCHIP · FETs & Power MOSFETs · MPN APT48M80B2

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)305nC@10V
Current - Continuous Drain(Id)49A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation1.135kW
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.33nF

Technical details

800V 49A 5V 1.135kW 190mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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