MICROCHIP · FETs & Power MOSFETs · MPN APT45M100J
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| Gate Charge(Qg) | 570nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 960W |
| Reverse Transfer Capacitance (Crss@Vds) | 245pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 18.5nF |
1kV 45A 4V 960W 180mΩ@10V 1 N-channel SOT-227 Single FETs, MOSFETs RoHS