MICROCHIP APT38M50J

MICROCHIP · FETs & Power MOSFETs · MPN APT38M50J

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Specifications

Gate Charge(Qg)220nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)945pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation357W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)100mΩ
Number1 N-channel
Input Capacitance(Ciss)8.8nF
TypeN-Channel

Technical details

500V 38A 5V 357W 100mΩ 1 N-channel N-Channel SOT-227B-4 Single FETs, MOSFETs RoHS

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