MICROCHIP APT38F50J

MICROCHIP · FETs & Power MOSFETs · MPN APT38F50J

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Specifications

Gate Charge(Qg)220nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation355W
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.8nF

Technical details

500V 38A 2.5V 355W 100mΩ@10V 1 N-channel SOT-227B-4 Single FETs, MOSFETs RoHS

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