MICROCHIP APT34N80B2C3G

MICROCHIP · FETs & Power MOSFETs · MPN APT34N80B2C3G

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)770pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.585nF

Technical details

800V 11A 3.9V 156W 450mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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