MICROCHIP · FETs & Power MOSFETs · MPN APT31M100B2
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| Gate Charge(Qg) | 260nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.04kW |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.5nF |
1kV 32A 3V 1.04kW 380mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS