MICROCHIP · FETs & Power MOSFETs · MPN APT29F80J
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| Gate Charge(Qg) | 303nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 543W |
| RDS(on) | 210mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.326nF |
800V 31A 4V 543W 210mΩ@10V 1 N-channel SOT-227B-4 Single FETs, MOSFETs RoHS