MICROCHIP APT22F100J

MICROCHIP · FETs & Power MOSFETs · MPN APT22F100J

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Specifications

Gate Charge(Qg)305nC@10V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation545W
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.835nF

Technical details

1kV 23A 4V 545W 380mΩ@10V 1 N-channel SOT-227B-4 Single FETs, MOSFETs RoHS

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