MICROCHIP · FETs & Power MOSFETs · MPN APT19M120J
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| Gate Charge(Qg) | 300nC@10V |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 545W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 530mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.67nF |
1.2kV 19A 4V 545W 530mΩ@10V 1 N-channel SOT-227B-4 Single FETs, MOSFETs RoHS