MICROCHIP APT19F100J

MICROCHIP · FETs & Power MOSFETs · MPN APT19F100J

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Specifications

Gate Charge(Qg)260nC@10V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation460W
RDS(on)440mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.5nF

Technical details

1kV 20A 4V 460W 440mΩ@10V 1 N-channel SOT-227B-4 Single FETs, MOSFETs RoHS

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