MICROCHIP · FETs & Power MOSFETs · MPN APT10M11JVRU3
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| Gate Charge(Qg) | 300nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 142A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 450W |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.6nF |
100V 142A 4V 450W 11mΩ@10V 1 N-channel SOT-227 Single FETs, MOSFETs RoHS