MICROCHIP · FETs & Power MOSFETs · MPN APT106N60B2C6
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 308nC@10V |
| Current - Continuous Drain(Id) | 106A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 833W |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.39nF |
600V 106A 3.5V 833W 35mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS