Megain MGW80N120N

Megain · FETs & Power MOSFETs · MPN MGW80N120N

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)54nC
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation175W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)80mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)659pF
TypeN-Channel

Technical details

1.2kV 35A 2.7V 175W 80mΩ@18V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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