Megain MGV012N10N

Megain · FETs & Power MOSFETs · MPN MGV012N10N

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Specifications

Gate Charge(Qg)157nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.736nF
Current - Continuous Drain(Id)411A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation600W
RDS(on)1.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)176pF
Number1 N-channel
Input Capacitance(Ciss)11.074nF
TypeN-Channel

Technical details

N-Channel 100V 411A 600W Surface Mount TOLL

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