Megain MGP066N10N

Megain · FETs & Power MOSFETs · MPN MGP066N10N

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)8.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.148nF
TypeN-Channel

Technical details

N-Channel 100V 85A 125W Through Hole TO-220

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