Megain MGC080N10N

Megain · FETs & Power MOSFETs · MPN MGC080N10N

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Specifications

Gate Charge(Qg)30.1nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)53A
Output Capacitance(Coss)523pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.558nF
TypeN-Channel

Technical details

N-Channel 100V 53A Surface Mount PDFN-8(5x6)

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