MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN SI2302S
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| Gate Charge(Qg) | 5.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 115pF |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 600mW |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 48mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 160pF |
| Vgs | ±12V |
N-Channel 20V 2.3A Surface Mount SOT-23