MDD(Microdiode Semiconductor) SI2301S-2.3A

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN SI2301S-2.3A

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)-
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)-

Technical details

20V 1V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS

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