MDD(Microdiode Semiconductor) MDDG1C120R040K3

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDDG1C120R040K3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)171pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)52mΩ@20V
Number1 N-channel
Input Capacitance(Ciss)2.44nF
TypeN-Channel

Technical details

1.2kV 55A 4V 278W 52mΩ@20V 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS

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