MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDDG10R08P
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 75A |
| Output Capacitance(Coss) | 410pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 6.5mΩ@10V;8.3mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
100V 75A 2V 100W 1 N-channel N-Channel TO-220C-3L Single FETs, MOSFETs RoHS