MDD(Microdiode Semiconductor) MDDG10R08G

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDDG10R08G

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)638pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 100V 75A 69W Surface Mount PDFN5x6-8L

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