MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDDG06R10Q
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| Output Capacitance(Coss) | 290pF |
|---|---|
| Pd - Power Dissipation | 35W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 70nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.02nF |
35W 60V 1.7V 8mΩ@10V 1 N-channel N-Channel PDFN-8L(3x3) Single FETs, MOSFETs RoHS