MDD(Microdiode Semiconductor) MDDG06R01L

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDDG06R01L

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)3.885nF
Current - Continuous Drain(Id)330A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation330W
RDS(on)1.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)203pF
Number1 N-channel
Input Capacitance(Ciss)7.397nF

Technical details

60V 330A 3V 330W 1.2mΩ@10V 1 N-channel N-Channel TOLL Single FETs, MOSFETs RoHS

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