MDD(Microdiode Semiconductor) MDDG04R06Q

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDDG04R06Q

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Specifications

Output Capacitance(Coss)524pF
Pd - Power Dissipation40W
Configuration-
Gate Charge(Qg)17nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.35V
RDS(on)4.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 N-channel
Input Capacitance(Ciss)875pF

Technical details

40W 40V 1.35V 4.5mΩ@10V 1 N-channel N-Channel PDFN-8L(3x3) Single FETs, MOSFETs RoHS

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