MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDDG04R01L
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 3.55nF |
| Current - Continuous Drain(Id) | 320A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF |
| RDS(on) | 0.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.3nF |
| Type | N-Channel |
40V 320A 1.65V 125W 0.6mΩ@10V 1 N-channel N-Channel TOLL Single FETs, MOSFETs RoHS