MDD(Microdiode Semiconductor) MDD68N10D

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD68N10D

No reviews yet — be the first to review MDD(Microdiode Semiconductor) MDD68N10D.

Specifications

Output Capacitance(Coss)743pF
Pd - Power Dissipation95W
Gate Charge(Qg)28nC
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)7.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.645nF

Technical details

95W 100V 2.8V 7.6mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs