MDD(Microdiode Semiconductor) MDD60N04D

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD60N04D

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)48nC@10V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)165pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation114W
RDS(on)5.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)155pF
Number1 N-channel
Input Capacitance(Ciss)2.33nF
TypeN-Channel

Technical details

40V 60A 1.5V 114W 5.7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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