MDD(Microdiode Semiconductor) MDD50P02Q

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD50P02Q

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Specifications

Gate Charge(Qg)50nC@4V
Drain to Source Voltage20V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)400pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation60W
RDS(on)6.2mΩ@4.5V;8mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)356pF
Number1 P-Channel
Input Capacitance(Ciss)3.845nF
TypeP-Channel

Technical details

20V 50A 600mV 60W 1 P-Channel P-Channel PDFN-8L(3x3) Single FETs, MOSFETs RoHS

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