MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD50P02Q
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| Gate Charge(Qg) | 50nC@4V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 400pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 60W |
| RDS(on) | 6.2mΩ@4.5V;8mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 356pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.845nF |
| Type | P-Channel |
20V 50A 600mV 60W 1 P-Channel P-Channel PDFN-8L(3x3) Single FETs, MOSFETs RoHS