MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD50P02G
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| Output Capacitance(Coss) | 385pF |
|---|---|
| Pd - Power Dissipation | - |
| Gate Charge(Qg) | 50nC |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| RDS(on) | 5.8mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 338pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.859nF |
20V 600mV 5.8mΩ@4.5V 1 P-Channel P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS