MDD(Microdiode Semiconductor) MDD50P02G

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD50P02G

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Specifications

Output Capacitance(Coss)385pF
Pd - Power Dissipation-
Gate Charge(Qg)50nC
Drain to Source Voltage20V
Configuration-
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
RDS(on)5.8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)338pF
Number1 P-Channel
Input Capacitance(Ciss)2.859nF

Technical details

20V 600mV 5.8mΩ@4.5V 1 P-Channel P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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