MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD50N10D
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| Output Capacitance(Coss) | 263pF |
|---|---|
| Pd - Power Dissipation | 60W |
| Gate Charge(Qg) | 13nC |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 867pF |
60W 100V 2V 15mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS