MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD4N60D
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Configuration | Half-Bridge |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 61pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 1.75Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
600V 4A 4V 100W 1.75Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS