MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD30N06D
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 37W |
| RDS(on) | 25mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.422nF |
| Type | N-Channel |
60V 30A 1.5V 37W 25mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS