MDD(Microdiode Semiconductor) MDD3080

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD3080

No reviews yet — be the first to review MDD(Microdiode Semiconductor) MDD3080.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.55V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)245pF
RDS(on)3.5mΩ@10V;4.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.33nF
TypeN-Channel

Technical details

30V 80A 1.55V 83W 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs