MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD2N60D
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 10.2nC@10V |
| Output Capacitance(Coss) | 36pF |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 4.5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 338pF |
600V 2A 4V 35W 4.5Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS