MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD2310
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| Gate Charge(Qg) | 6nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 34pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF |
| RDS(on) | 79mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 247pF |
| Type | N-Channel |
N-Channel 60V 3A 350mW Surface Mount SOT-23