MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD2301
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| Gate Charge(Qg) | 800pC |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 33mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 330pF |
P-Channel 20V 3.8A 900mW Surface Mount SOT-23