MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD210N40P
No reviews yet — be the first to review MDD(Microdiode Semiconductor) MDD210N40P.
| Gate Charge(Qg) | 190nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 310W |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 40V 210A 310W Through Hole TO-220C-3L