MDD(Microdiode Semiconductor) MDD20N65F

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD20N65F

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Specifications

Configuration-
Gate Charge(Qg)58.3nC
Drain to Source Voltage650V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.962nF

Technical details

N-Channel 650V 2A 45W Through Hole TO-220F

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